| 摘要 |
PURPOSE:To enhance the bonding strength by a method wherein, during a grinding process, the rear of a semiconductor chip is finished in such a way that the surface roughness RMAX is a prescribed value. CONSTITUTION:The rear of a GaAs layer situated under a chip 3 is shaped to be rough, and a metallized layer 5 is formed on this rear by evaporation of Ti. In addition, an Au layer 6 is formed on the surface of this Ti layer 5 so that the layer becomes adaptable to an adhesive agent, and is glued to a substrate 1 through an adhesive-agent layer 7 of AuSn. The rear of the semiconductor chip 3 is shaped to be rough by a grinding process at the stage of a wafer. If the 'roughness' is expressed by the difference RMAX between the highest and the deepest parts on the rear of the semiconductor chip 3, the RMAX is to range from 0.2 to 0.5 (mum). This value is an especially effective value when a soldering process is applied to the GaAs chip and a metallizing process is executed by evaporation of the Ti film. |
