| 摘要 |
PURPOSE:To obtain an accurate potential waveform free of local field effect by opening a protecting film on wirings by focusing ion beam etching, newly forming a metal electrode by a focusing ion beam CVD at the periphery of its fine hole, and measuring it by a secondary electron detector. CONSTITUTION:A protecting film on wirings is opened by etching by focusing ion beam irradiation, and metal is deposited by scanning a focusing ion beam while spraying hexacarbonyl metal vapor to a sample surface by a gas gun to form an electrode. The focusing ion beam is eventually irradiated to the electrode, secondary electrons radiated in this case are detected to measure a potential waveform, thereby evaluate the operation. The alternation of metal wirings of a semiconductor device and the evaluation of an IC operation by a charged particle beam tester can be accurately and rapidly executed without influence by local field effect. Accordingly, an IC developing period can be remarkably shortened.
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