| 摘要 |
PURPOSE:To obtain a sputtering target which forms a heat resistant protective layer without generating cracks when projected with laser light having a large spot diameter by dispersing a compd. which does not solutionize with chalcogenide of metal nearly uniformly into said chalcogenide. CONSTITUTION:The sputtering target is obtd. by using the chalcogenide of the meal and the compd. which does not solutionize therewith as essential components and dispersing the above-mentioned compd. nearly uniformly into the above-mentioned chalcogenide. For example, zinc chalcogenide such as ZnS, ZnSe and ZnTe and lead chalcogenide such a PbS, PbSe and PbTe are used as the above-mentioned chalcogenide of the metal and, for example, oxides such as SiO2, GeO2, In2O3, and TeO2, nitrides such as Si3N4 and carbides such as SiC are used as the above-mentioned compd. This target forms the heat resistant protective layer to realize an optical disk which can be initialized quickly without generating cracks when projected with the laser light having the large spot diameter and is stable against environmental changes.
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