| 摘要 |
This invention relates to an interconnection device which includes microminiaturized conductive interconnections between a pair of conductive layers and to a method for fabricating such devices. The conductive interconnections are made from normal metal, superconductors, low bandgap insulators, semimetals or semiconductors depending on the application, and form vias between the two layers of normal metallic, superconducting, low bandgap insulating, semimetallic or semiconducting materials, or any combination of these materials. The structure and method of the present invention revolve about contamination resist cone structures which are formed by irradiating a carbonaceous film such as silicone oil with an electron beam. After the contamination cones are formed on a substrate, using one fabrication approach, a conductive layer is deposited on a portion of a cone and over the structure. An insulating material is deposited conformally over the conductive layer and cone such that thickness of the insulating material over the conductive layer has a thickness less than the height of the contamination cone. Those portions of the insulation material, the conductive layer and the contamination cone which extend beyond the nominal surface of the insulating layer are removed, exposing a portion of the cone and a portion of the conductive layer which forms an interconnection. In a final step, another layer of conductive material is deposited on the insulation layer and on the exposed portion of the conductive interconnection and cone such that an electrically conductive interconnection is made between the just deposited conductive layer and the initially deposited conductive layer.
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