| 摘要 |
PURPOSE:To prevent the transfer error of a bubble with the potential barrier of the boundary end of an ion implantation pattern by forming an ion implantation pattern having a pair of circumferential ends to extend approximately in parallel while this is sandwiched along the circumferential edge part of the part not to constitute a bubble transferring path. CONSTITUTION:At both sides of a circumferential edge 13 at an opposite side to constitute a bubble transfer path 10, ion implantation patterns 30A and 30B having circumferential edges l1 and l2 to extend approximately in parallel so as to sandwich this are formed. By a potential barrier effect, the force repulsing, a bubble works at the area between the circumferential edges l1 and l2, a bubble B can not move along the circumferential edge 13 and proceeds along an inherent bubble transfer path 10. Thus, the transfer error due to the stripe of the bubble is cancelled, an operation dependence property as a bubble memory element is improved and an operating margin is also improved.
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