PRODUCTION OF OPTICAL INFORMATION RECORDING MEMBER

摘要

PURPOSE:To permit determination of the ratio of tellurium and oxygen in a film by the flow rate of oxygen so that the film can be formed stably with the specified flow rate of oxygen by using gaseous Ar and O2 and executing direct reaction sputtering from a Te1-XPdX target consisting of an alloy or mixture. CONSTITUTION:Ar and O2 are introduced through gas introducing valves 2, 3 into a vacuum vessel 1. The oxygen partial pressure in the chamber is maintained from 0.5X10<-3>Torr to 1.5X10<-3>Torr. The flow rate of the Ar to be introduced is selected at 4.0sccM and the amt. of the O2 to be introduced at 2.0sccM. The specified atmosphere is maintained in the vacuum vessel 1 by the gases introduced therein. The target 5 is the mixture composed of tellurium and additive material palladium and is cooled with water via a backing plate 6. The target consisting of the mixture composed of Te and Pd is used and is subjected to sputtering in the gaseous atmosphere of 10<-3>Torr oxygen partial pressure or below, by which the maintenance of the specified ratio of Te and Pd in the formed film by the preliminary selected ratio of Te and Pd in the target consisting of the mixture is permitted.