| 摘要 |
PURPOSE:To prevent parasitic transistor movement and facilitate setting-up control of a channel length by having a structure of a channel formation region which is protruded from a silicon substrate, thereby forming a MOS gate at the side of the above protruded part and by causing most of the parts other than a part of a nearby interface with a gate oxide film, that is, a part where an inversion layer is formed, to be composed of a low resistance layer and a source region. CONSTITUTION:The surface of a P-layer 21 of a silicon wafer where the epitaxial growths of N<+> layer 19, N<-> layer 20, and P-layer 21 are performed in sequence on a P<+> substrate 18 is oxidized and an oxide film except the desired parts is removed and the oxide film 22, that is, a diffused mask is formed. After using this diffused mask 22, a P<+> diffused layer 23 that penetrates the P-layer 21 and comes to an N<-> layer 20 is formed. A gate oxide film 25 and a polysilicon film 26 are formed in sequence at the surface of the diffused layer 23 and other parts except contact formation parts that are in contact with a source and a P<+> base layer 23 are covered with resist 27. Then, other parts except an N<+> source formation region on the exposed P<+> base layer 23 are masked with resist 29 and an N<+> source region 30 is formed after performing an ion implantation. Thus, a contact hole 32 connecting with the N<+> source region 30 and the P<+> base layer 23 as well as the contact hole 33 connecting with a gate electrode 26 are formed.
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