| 摘要 |
Dual quantum-well tunable semiconductor infrared laser including a succession of layers with thicknesses and degrees of doping such that a conduction band profile is obtained, for the laser structure, which exhibits a fairly thin barrier B1 to permit tunnel-effect coupling and separates two quantum wells P1, P2 of different widths L1, L2 so that the smallest energy level of one of the wells P2 is greater than the lowest level of the other well P1. <IMAGE>
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