| 摘要 |
PURPOSE:To decompose and remove an Al-Si layer yielded at an interface between a substrate and an electrode film, by performing heat treatment after projection treatment with laser. CONSTITUTION:When a pulse shaped laser beam 6 is projected, an Al deposited film 4, which is laminated on an Si substrate 1 together with an interlayer insulating film 2, is fused and flows into a contact hole. Thus the surface of the film 4 is flattened. An Al-Si alloy layer 5 is formed at an interface between the substrate 1 and the Al. When annealing and heat treatment are performed in an inactive gas under the conditions corresponding to the projection of the laser light, Si in the layer 5 is deposited on the side of the substrate. The layer 5 is decomposed and removed. As a result, an electrode wiring can be provided excellently and positively without the increase in resistance, and the reliability of a semiconductor device is enhanced.
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