| 摘要 |
PURPOSE:To obtain an electron beam positive resist superior in dry etching resistance and high in sensitivity by using an alpha-methylstyrene/alpha-chloroacrylate copolymer to prepare the resist. CONSTITUTION:The electron beam resist is made of the alpha-methylstyrene/alpha- chloroacrylate copolymer represented by the formula shown on the right in which R is alkyl, and each of (l) and (m) is not zero. The alpha-methylstyrene groups have superior dry etching resistance due to the protective and stabilizing actions of the benzene ring, and the alpha-chloroacrylate groups have high sensitivity due to the introduction of chloro group to the alpha-position enhancing tendency to cleave the main chain, thus permitting the obtained electron beam positive resist to be enhanced in dry etching resistance and sensitivity by employing this copolymer. |
