| 摘要 |
PURPOSE:To obtain a photosensitive body superior in acceptance potential characteristics by forming at least a part of an electric retaining layer constituted by alternately laminating amorphous silicon thin films and amorphous silicon thin films containing at least one of C, O, and N. CONSTITUTION:At least a part of the charge retaining layer 5 is constituted by alternately laminating the thin films of amorphous silicon and the thin films of amorphous silicon containing at lest one of C, O, and N, and the lives of carriers is prolonged by 5-10 times in the potential well layer of the charge retaining layer, as compared with the case of using a single layer not having superlattice structure, and barrier layers are formed periodically by the discontinuity of the band gaps in the superlattice structure, and the carriers are allowed to pass easily through a bias layer by the tunnel effect, thus permitting the transfer performance of the carrier to be enhanced, high photoelectric conductivity characteristics and a sharp image to be obtained. |
