| 摘要 |
PURPOSE:To contrive a mass production by activating in advance a gas state substance for generating a valence electron control agent in an activating space to generate active species, and introducing the species into a reaction space to form a doped deposited film on a substrate, thereby saving energy in an inexpensive apparatus. CONSTITUTION:Gases are respectively supplied by gas supply pipe lines 123-125. An active species in supplied by an active species introduction pipe 132 to an active species introduction pipe 133. The gas introduction pipes, the gas supply pipe lines and a vacuum chamger s120 are evacuated in vacuum through a main vacuum valve 119. A substrate 118 is set at a desired distance from the positions of the pipes by elevationally moving a substrate holder 112. In order to deposit, for example, phosphorus-doped high concentration tin deposited film (Sn:H:F:P), PH3 is activated by a PF flow discharge in an activating chamber 128, the active species generated from the PH3 is introduced to a depositing chamber 120 through the pipe 133 to depost the phosphorus-doped high concentration tin deposited film (5000Angstrom of thickness). |
