发明名称 PLASMA PROCESSOR
摘要 PURPOSE:To prevent a material to be processed by charged particles in a plasma from being electrically damaged by separating and sealing the charged particles in the plasma from neutral radical. CONSTITUTION:A wafer 5 is placed on a stage 7 in which the bottom of a processing chamber 6 is grounded. Plasma gas inlet 8 and outlet 9 are formed near the bottom of the chamber 6. A microwave is introduced by a waveguide 2 to the chamber 6. The chamber 6 is filled in advance with plasma gas, and held in a predetermined vacuum pressure state. Thus, the interior gas is excited to a plasma state. In this case, a magnet coil 4 is energized, and excited to generate a magnetic field. The line of magnetic force is introduced perpendicularly to a wafer 5, and finely reduced and sealed simultaneously upon generation of the plasma by this pinch effect. Only the charged particles (ions and electrons) in the plasma are finely reduced and sealed, and neutral radical is not affected by the magnetic field, and not converged. The wafer 5 is not affected by the charged particles, and processed only by the neutral radical.
申请公布号 JPS63136626(A) 申请公布日期 1988.06.08
申请号 JP19860281973 申请日期 1986.11.28
申请人 CANON INC;CANON HANBAI KK 发明人 KAWAURA HIROSHI;HIROHASHI TETSUO;MISHIRO NOBUYUKI
分类号 H01L21/302;C23F1/00;C23F4/00;H01L21/3065 主分类号 H01L21/302
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