| 摘要 |
A field effect transistor-type moisture sensor comprising a field effect transistor device incorporated with a moisture sensitive means, the electrostatic capacity or the electrical conductivity of which varies with the absorption and the desorption of water vapor or moisture, wherein said moisture sensitive means is disposed on a gate insulating film of said field effect transistor device to form an electrode structure, said moisture sensitive means being a film prepared by cross-linking cellulose acetate butyrate with at least one selected from the group consisting of compounds containing two or more isocyanate groups; compounds containing two or more epoxy groups; compounds containing two or more carboxylic acid groups; and acid anhydrides of carboxylic acids. |
