| 摘要 |
PURPOSE:To form the length of a Schottky gate electrode at submicron order, and to lower series parasitic resistance by shaping a high-concentration impurity region in a self-alignment manner to a Schottky gate electrode and a source electrode and a drain electrode on both sides of the Schottky gate electrode. CONSTITUTION:Si<+> is implanted to a substrate 1, an operating layer 2 is formed, an electrode metal 3' is shaped, a resist pattern 6 is formed, and a Schottky gate electrode 3 having an inverted trapezoid sectional shape is formed through reactive ion beam etching. High concentration impurity regions 7, 8 are shaped through an ion implantation method, the pattern 6 is removed, and an impurity is activated. A metallic material having an ohmic contact is evaporated vertically to form an electrode metal 9, a resist 10 is applied flatly, and the resist 10 is machined through ion etching using O2 as a reaction gas. Etching is stopped when the metallic material having the ohmic contact comes is sight, the metallic material is removed through the sputtering of Ar, the resist 10 is taken off, the residual electrode metal 9 is alloyed, and a source electrode 4 and a drain electrode 5 are formed, thus completing a MESFET.
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