| 摘要 |
PURPOSE:To effectively prevent a foreign material from being adhered to an exposed electrode surface by performing a step of exposing an electrode surface immediately before the step of covering the electrode surface with a conductive material after the exposure. CONSTITUTION:The circuit forming surface of a semiconductor wafer 1 is covered with a negative resist to form a resist film 2. Then, the rear surface of the wafer 1 is covered with the negative resist to form a resist film 3. The film 2 except the part located on the opening of the wafer 1 is exposed. Thereafter, it is developed to form the opening 2a of the film 2, thereby exposing the electrode surface disposed at the opening of a final passivation film. After the opening 2a is formed, it is rapidly electrically plated. As a result, the electrode surface exposed in the bottom of the opening 2a can be covered with gold, and a bump electrode 4 can be formed. Thus, it can effectively prevent a foreign material from being adhered to the electrode surface.
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