发明名称 |
Nonsaturating bipolar logic gate having a low number of components and low power dissipation |
摘要 |
A two input nonsaturating bipolar logic gate consists of just two bipolar transistors plus a pair of resistors plus two voltage buses. One resistor has a resistance RC and it is connected from one of the voltage buses to the collector of both transistors. The second resistor has a resistance RE and it is connected from the other voltage bus to the emitter of both transistors. Those resistances RC and RE are selected such that RC/RE>1 and 0.1<(VCC-VBE)RC/RE<0.8 VBE where VBE is the base to emitter voltage at which each transistor turns on and VCC is the voltage between the two voltage buses.
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申请公布号 |
US4749885(A) |
申请公布日期 |
1988.06.07 |
申请号 |
US19870015382 |
申请日期 |
1987.02.17 |
申请人 |
UNISYS CORPORATION |
发明人 |
GAL, LASZLO V. |
分类号 |
H03K19/082;(IPC1-7):H03K19/088;H03K19/013;H03K19/086 |
主分类号 |
H03K19/082 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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