<p>: The invention provides a process for preparing a single crystal which comprises drawing up a single crystal by the Czochralski process and cooling it from a temperature not lower than 600.degree.C under a reduced pressure or in vacuo. The process provides a single crystal having a dislocation density of 1.5 x 104 cm2 or less.</p>
申请公布号
CA1237640(A)
申请公布日期
1988.06.07
申请号
CA19840456243
申请日期
1984.06.08
申请人
SUMITOMO ELECTRIC INDUSTRIES, LTD.;NIPPON TELEGRAPH AND TELEPHONE CORPORATION