| 摘要 |
PURPOSE:To inexpensively obtain a Bloch line memory element having a high storage density of 1Gb/cm<2> class by providing a function section converting the presence or absence of a Bloch line into the presence or absence of a bubble magnetic domain. CONSTITUTION:At least the function section is provided, which converts the presence or absence of a Bloch line 2 into the presence or absence of a bubble magnetic domain 4 or a stripe magnetic domain 1 by a single conductor 3 overlapped at least with the strip magnetic domain 1. In applying power to the linear single conductor 3, a magnetic field in the direction of bias magnetic field HB is generated at one side end of the conductor 3 without fall and it is possible to cut off the stripe magnetic domain 1 by the magnetic field. Since the linear conductor 3 is processed easily and the gap with other conductor is selected freely, then electric insulation is applied easily. Thus, the Bloch line memory of 1Gb/cm<2> is obtained.
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