Radiation-sensitive device.

摘要

A p-channel depletion-mode MOS device is utilized for measuring low levels of ionizing radiation. The radiation generates electron/hole pairs in the gate oxide (18). The electrons rapidly escape to the gate electrode (24) but some of the holes are trapped in trap sites or interface states in the vicinity of the gate oxide (18) channel (16) interface. This causes a shift in the threshold voltage, and hence in the drain current for given gate (VG) and drain voltages (VD).