| 摘要 |
PURPOSE:To simplify a process, and to improve interfacial characteristics by converting one part of each N layer into an oxide, a nitride or a carbide in a tandem type solar cell. CONSTITUTION:When forming blocking layers 6, 10, one part of the film thickness of N-type amorphous Si layers 5, 9 are thermally treated with plasma in the gas atmosphere of N2, O2, CH4, etc., and changed into a nitride, an oxide or a carbide, such as Si3N4, SiO2 or SiC. Consequently, one part of the films of the N-type amorphous Si layers 5, 9 are turned into blocking layers 6, 10 having thickness of approximately 20-30Angstrom . The order of a process in which the blocking layers 6, 10 are shaped at that time is as follows: A P layer, an I layer and an N layer 3, 4, 5 in a first cell are formed in succession from first electrode 2, and one part of the n-type amorphous Si layer 5 in the first cell is converted into the blocking layer 6 after shaping the layer 5, and a P layer, an I layer and an n-layer 7, 8, 9 in a second cell are formed, and one part of the n-type amorphous Si layer 9 is changed into the blocking layer 10 after shaping the layer 9. Lastly, a second electrode 11 is shaped, thus forming a solar cell. |
