Forming passivated semiconductor elements - on semiconductor wafer having one type conductivity to produce mesadiodes

摘要

Mesadiodes having an even p, n-junction or a Schottky junction are produced by applying a patterned masking layer onto a semiconductor wafer having one type conductivity; etching the uncovered parts of the surface; removing passivating the uncovered parts of the surface; removing at least a part of the masking layer; and carrying out further operations, such as diffusion, in the conventional manner. Very small diodes can be formed (dia. 0.1 mu). The method is suitable for mfr. of silicon multi diode targets for TV transmission tubes.