| 摘要 |
PURPOSE:To reduce the area of a capacitor element, and increase the integration density, by applying a TaNO film obtained by oxidizing a TaN film to an insulating film for a capacitor element of MIM structure constituting a semiconductor device. CONSTITUTION:The title semiconductor device is constituted by integrating a semiconductor element 14, a resistance element and a capacitor element 11 on a semiconductor substrate 1. The capacitor element 11 of this device is made up in a MIM (metal/insulating film/metal) structure, and the insulating film 4 of the capacitance element is made of oxide of tantalum nitride (TaNO). The specific dielectric constant epsilonr is about three times as large as that of a CVDSiO2 film and a plasma CVDSiN2 film. Accordingly, the area of a capacitor element in which the TaNO film is applied to the insulating film can be reduced because of the large specific dielectric constant of the film. |
