发明名称 PLASMA CVD EQUIPMENT
摘要 PURPOSE:To form a thin film having an excellent property over a long time by using a discharge electrode also as a heater for heating a substrate to facilitate the temperature control of a substrate film forming surface. CONSTITUTION:Since it has a substrate holder 3 for holding a substrate 2 for forming a thin film and a discharge electrode 4 disposed oppositely to the holder 3 and used also as a heater for heating the substrate, the electrode 4 itself is heated to the temperature near the substrate temperature. Thus, since material gas decomposed by a glow discharge does not become powder on the electrode 4 but becomes a dense thin film to be adhered, the discharge and the generation of a plasma are stabilized to form a thin film having excellent property. A frequency cleaning is not necessary, and the film formation for a long time and the repetition of the film formation can be performed. Further, since the electrode 4 near the substrate 2 oppositely to the film forming surface is used also as the substrate heater, the film forming surface of the substrate 2 can be directly heated to properly and easily control the temperature of the film forming surface.
申请公布号 JPS63124514(A) 申请公布日期 1988.05.28
申请号 JP19860271026 申请日期 1986.11.14
申请人 SUMITOMO ELECTRIC IND LTD 发明人 ITOZAKI HIDEO
分类号 H01L21/31;H01L21/205;H01L31/04 主分类号 H01L21/31
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