发明名称 |
FORMATION OF DEPOSITED FILM |
摘要 |
PURPOSE:To improve the rate of deposition and to simplify controlling for film formation conditions by introducing a precursor which is a raw material for forming a deposited film and active species for applying activity thereto respectively separately into a deposition space. CONSTITUTION:The precursor which is a raw material for forming the deposited film but does not form the deposited film in the energy state as it is formed in a cracking chamber 2. The active species which forms the deposited film by inducing a chemical interaction with the above-mentioned precursor is formed in the cracking space 3. The active species and the above-mentioned precursor are respectively separately introduced through an active species introducing pipe 10 and a precursor introducing pipe 7 into a deposition space 1, by which the deposited film is formed on a substrate. |
申请公布号 |
JPS63125679(A) |
申请公布日期 |
1988.05.28 |
申请号 |
JP19870136453 |
申请日期 |
1987.05.30 |
申请人 |
CANON INC |
发明人 |
HIROOKA MASAAKI;OGAWA KYOSUKE;ISHIHARA SHUNICHI;SHIMIZU ISAMU |
分类号 |
H01L31/0248;C23C16/24;C23C16/30;C23C16/44;C23C16/452;C23C16/48;C23C16/50;C23C16/513;G03G5/08;G03G5/082;H01L21/205;H01L31/08 |
主分类号 |
H01L31/0248 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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