| 摘要 |
PURPOSE:To form a diffused layer without deterioration of a device, by depositing tungsten only on a gate electrode, which is formed by patterning polycrystalline silicon by a vapor growth method. CONSTITUTION:A thermal silicon oxide film 12, which is to become a gate oxide film, is formed on a P-type silicon semiconductor substrate 11. Polycrystalline silicon is deposited thereon, and patterning is performed. Thus a gate electrode 13 is formed. Then tungsten 14 is selectively deposited only on the polycrystalline silicon 13 by a vapor growth method. Arsenic ions are implanted, and a high concentration diffused layer 15 is formed. After the tungsten 14 is removed, phosphorus ions are implanted, and a low concentration diffused layer 16 is formed. Thus the diffused layer 16 without deterioration of the device is obtained.
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