PRODUCTION OF SILICON SINGLE CRYSTAL

摘要

PURPOSE:To produce the titled single crystal in high efficiency, suppressing the generation of dislocation caused by the lattice strain induced by dopant atom, by dipping a seed crystal in inclined state into molten polycrystalline silicon added with a dopant and pulling up the seed crystal. CONSTITUTION:A seed crystal is dipped in molten polycrystalline silicon added with a dopant such as Sb in a state inclining the crystal face of the seed crystal from pulling up crystal face (<111> and <100>) of the single crystal to be produced by 0.2-4 deg. and is pulled up from the molten silicon to obtain the objective single crystal.