| 摘要 |
PURPOSE:To reduce the number of manufacturing processes of a semiconductor and to realize a processing of high precision, by a method wherein the surface of an on-substrate insulating film is charged with electricity in to an arbitrary pattern and patterning is conducted with an electric charge thus given used as a mask. CONSTITUTION:An insulating film 2 is formed on a semiconductor substrate 1. The surface of the insulating film 2 is charged with electricity 5 in an arbitrary pattern by a method of electron beams or the like. When immersion in an etching solution is conducted in this state, the part of the insulating film 2 in which the surface is charged with electricity is left unetched, while only the part thereof not charged is melted into the solution, and thus patterning is conducted.
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