发明名称 INTEGRATED CIRCUIT
摘要 PURPOSE:To be able to easily measure the potential of wirings under a protecting film with an EB tester by providing a measuring terminal made of metal above metal wirings through an insulator, and forming a hole at a part corresponding to lower wirings on the terminal. CONSTITUTION:An EB measuring metal terminal 4 is provided through a protecting film 1 on metal wirings 2. Further, an EB measuring metal terminal 4 is so formed as to cover the wirings 2 to be observed by an EB tester. Ga ions are implanted into the hole 5 of the terminal 4 to form conductivity with the lower part. Since the hole 5 is formed, the part to be etched is apparent, and in comparison with the case where the terminal 4 must also be etched, the processing time is shortened. After the above conductive process, EB is irradiated to the terminal 4 to be measured.
申请公布号 JPS63122136(A) 申请公布日期 1988.05.26
申请号 JP19860267518 申请日期 1986.11.12
申请人 HITACHI LTD 发明人 TODOKORO HIDEO;ISHITANI SUSUMU;KAGA TORU
分类号 H01L21/66;G01R31/302;H01L21/3205;H01L23/52 主分类号 H01L21/66
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