| 摘要 |
PURPOSE:To realize high-speed operation by a method wherein a Ge film whose mobility of an electron and a hole is bigger than that of Si is formed on an Si substrate and this Ge is used as a channel for a MOS-type transistor. CONSTITUTION:A Ge layer 6 is formed in a region which is located just under a gate electrode 4 and a gate insulating film 3 and is transformed into a channel. In addition, a source and a drain are constructed by a germanium layer 7 and an Si layer 8 doped with an impurity to give a p-type or an n-type. Because the mobility of germanium is by about two times bigger for an electron and by about 4.5 times bigger for a hole than that of Si, a MOS-type transistor, of the identical size, constructed by the Ge can operate by two times faster for an n-channel and by 4.5 times faster for a p-channel than in the case of the Si. As compared with the MOS-type transistor constructed by the Si, the characteristic of the p-channel is improved remarkably and is nearly equal to that of the n-channel; it is possible to greatly improve the characteristic of an integrated circuit of the CMOS structure. |
