THIN FILM FORMING DEVICE

摘要

PURPOSE:To form a thin film having good quality at a low temp. and high speed on a substrate in a treatment chamber by making combination use of a photo CVD method and plasma CVD method by electron cyclotron resonance in the case of forming the thin film on said substrate by introducing a gaseous raw material into the treatment chamber and decomposing the gas. CONSTITUTION:The ionizing gas such as H2 or N2 is introduced through an inlet 10 into an ionization chamber 13 provided with a magnetic field generator 6 and the microwaves from a microwave oscillator 9 of an electron cyclotron resonance plasma CVD device are introduced through a transparent window 7 into the chamber 13 to generate plasma and to ionize the gaseous H2 or N2 which are the ionizing gas. The ionized gas is introduced as an ion shower through an ion leading-out window 12 into the reaction treatment chamber 5 in which the substrate 1 to be treated is place and into which a reactive gaseous compd. is introduced through an inlet 11. The surface of the substrate 1 is simultaneously projected with the laser light from a CO2 laser light source 4, etc., by which the thin film of the material generated by the decomposition of the reactive gas is formed at the low temp. and high speed on the surface of the substrate 1.