| 摘要 |
PURPOSE:To decrease the occurrence of white flaws and the occurrence of noise due to the dark current and obtain high picture quality by forming an electron blocking layer into a two-layer structure made of an As2Se3 layer and an Sb2S3 layer. CONSTITUTION:A photooonductive film 4 mainly made of amorphous silicon hydroxide and an electron blocking layer 5 formed into a two-layer structure made of an As2Se3 layer 6 and an Sb2S3 layer 7 are provided. The As2Se3 layer is excellent in an electron trapping function and properly traps an electron beam and prevents white flaws from occurring. The As2Se3 layer alone has an insufficient landing characteristic, and the Sb2S3 layer is provided to enrich the landing characteristic, thus the more excellent electron blocking layer is obtained. Thereby, the heat resistance is improved, the dark current exponentially increasing in relation to the temperature is controlled low, furthermore the electron strapping function of the electron blocking layer is reinforced, thus the occurrence of white flaws or noise is suppressed and the deterioration of the picture quality is suppressed.
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