| 摘要 |
PURPOSE:To obtain a semiconductor laser of high reliability which is capable of high speed operation, by forming, on both sides of a light emitting region, grooves which penetrate a P-N junction, and arranging, on the surface of the grooves, an impurity diffusion layer which constitutes the same conductivity type as the surface of a multilayer semiconductor structure. CONSTITUTION:On both sides of a light emitting region 30, grooves 70 and 71 are formed so as to penetrate at least one P-N junction, and, on the surfaces of the grooves, an impurity diffusion layer 9 is arranged which constitutes the same conductivity type as a multilayer semiconductor structure. For example, on an N-type InP substrate 1, an N-InP buffer layer 2, an InGaAsP active layer 3 and a P-InP clad layer 4 are grown, and two parallel grooves 51 and 52 are formed so as to face each other across a mesa stripe in the middle. Next, the following are stacked in order: a P-InP current block layer 5, a P-InP current confinement layer 7 and a P-InGaAs cap layer 8. Then, on both sides of a central mesa stripe 50, parallel grooves 70 and 71 reaching the buffer layer 2 are formed, and a P-type diffusion layer 9 is formed on the whole surface by diffusing Zn.
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