| 摘要 |
PURPOSE:To obtain uniform characteristics of transistors, by aligning the transistor patterns in the same direction. CONSTITUTION:An impurity diffused layer is formed by ion implantation in each drain electrode pattern 5'. The drain electrode patterns 5' are aligned in the same direction as shown by arrows A-A' on an Si substrate 1. A plurality of MOS transistors 11-16 are formed so that the direction of their layout patterns are aligned in the same direction. Since the positional relations of the electrode patterns 5' are all alinged in the same direction, angle dependence of the ion implantation has the same effect on all the pattern, and the uniform transistor characteristics with good controllability are obtained. |
