| 摘要 |
PURPOSE:To keep constant the characteristics of thin film transistor and improve stability and reliability thereof through the hydrogeneration by irradiating the surface of thin film transistor with the hydrogen ion generated by hydrogen discharge after depsotion of protection film and accelerated by a particular voltage. CONSTITUTION:A polycrystal silicon thin film 2 is deposited on a quartz substrate 1 by the reduced pressure vapor growth method, it is patterned like island, a gate insulating film 3 is grown by the thermal oxidation and a gate polycrystal silicon film 4 is deposted by the LPCVD method and the gate electrode is patterned. Thereafter, ion implantation is conducted to source, drain 2s, 2d on the self-alignment basis, SiO2 is deposited as the interlayer insulating film 5 by the normal pressure CVD method, it is then activated, a contact hole is opened and aluminum wiring 6 is laid. As a protection film 7, SiH4-N2 system gas is formed and the SiNx film is deposited on the substrate by the electron cyclotron resonance CVD method. |
