| 摘要 |
PURPOSE:To prevent the fluctuation of the solute concentration of the bottom of a growth solution, and to improve the composition of an extremely thin film layer and the reproducibility and uniformity of film thickness by making the area of an upper hole larger than that of a lower hole in the shape of a solution reservoir for sliding growth and forming a slot in a direction perpendicular to the direction of sliding to the lower section of the solution reservoir in extremely thin-film epitaxial growth through a liquid growth method. CONSTITUTION:When an InGaAsP/InP quantum well type epitaxial layer is shaped, upper holes are made larger than lower holes in the shape of solution reservoirs 2', 3', 4' for barrier layer solutions 2, 4 and a well layer solution 3, and lower holes 8, 9, 10 are each formed to said solution reservoirs 2', 3', 4'. The lower holes 8, 9, 10 are formed to a striped shape in the direction rectangular to the direction 11 of sliding. Since loading density applied to the bottoms of growth solutions is increased and the length of the direction 11 of sliding of the bottoms is shortened in the growth solutions received to the solution reservoirs having such a shape, the convection and vibrations and fluctuation of the solutions of the solution bottoms generated at a time when the slider 11 is slid are inhibited. Accordingly, the variation of the composition of solute concentration in the solutions is suppressed, thus allowing growth having reproducibility and uniformity.
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