| 摘要 |
PURPOSE:To prevent a diffusion to a growth layer of a doping agent as a low resistance-value element from a wafer, and to obtain an electrically stable device material by growing a thin-film onto an silicon substrate having low resistance by monosilane as a source gas and the doping agent first and conducting vapor growth by the predetermined source gas. CONSTITUTION:Wafers 4... are placed onto a susceptor 5, air in a reaction chamber 1 is purged with a carrier gas 10, and the temperature of the inside of the reaction chamber 1 is elevated to approximately 1000 deg.C. A valve V1 is opened, and a fixed quantity of monosilane gas is fed into the reaction chamber and vapor growth is performed. A fixed quantity of a dopant is allowed to flow, at the same time. The growth of prescribed film thickness is conducted, monosilane gas is all purged, and silicon tetrachloride is passed and vapor growth is performed. The dopant is passed so as to acquire a desired resistance value at that time. Accordingly, a steep vapor growth layer can be shaped onto the wafer susceptible to a solid-phase diffusion.
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