发明名称 PRODUCTION DEVICE FOR SEMICONDUCTOR
摘要 PURPOSE:To control the vapor pressure of an easily evaporable element in a treatment chamber at a desired value at all times even when a temperature changes by providing a pressure control means altering the internal volume of a communicating space communicating with the treatment chamber in response to fluctuations in the vapor pressure of the easily evaporable element in a liquid epitaxial growth device and a semiconductor thermal treatment equipment. CONSTITUTION:In an epitaxial growth device, blocking members 65 inserted into opening sections 64 in each boat 6 are slid in the opening sections 64 in response to the fluctuation of the vapor pressure of an easily evaporable element, thus changing the internal volume of communicating spaces. Accordingly, vapor pressure in a treatment chamber 62 is controlled to a desired value at all times.
申请公布号 JPS63119228(A) 申请公布日期 1988.05.23
申请号 JP19860295297 申请日期 1986.12.11
申请人 NIPPON MINING CO LTD 发明人 TANAKA YASUHIRO;ONOZUKA ARATA
分类号 H01L21/363;H01L21/208 主分类号 H01L21/363
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