| 摘要 |
The invention relates to a semiconductor device for protection against junction breakdowns for a semiconductor device with shallow junction depth, the protection device including a metal conducting line 10 serving for the electrical supply under high voltage, a second semiconductor region 12 of high concentration and having a type of conductivity opposite to that of the substrate of the device, this second region being connected to the metal conducting line by way of openings 13 made in the insulating film, and a first semiconductor region 11 having the same type of conductivity as the second region and being formed more deeply than the latter underneath the openings so as to allow ohmic connection. <IMAGE>
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