| 摘要 |
PURPOSE:To prevent an SiO2 film or an Si3N4 film coating in an ambient pressure CVD unit from being separated thereby to alleviate the contamination of an Si wafer by forming a PSG film in the CVD unit. CONSTITUTION:After a PSG film having 0.3um thick is formed on the inner wall or a jig in an ambient pressure CVD unit, an Si wafer is placed in the CVD unit, and a CVD-SiO2 film is formed. Then, the PSG film performs a role of absorbing the stress of an SiO2 film or an Si3N4 film formed simultaneously on the inner wall or a jig in the unit. Thus, even if the accumulated film thickness of the SiO2 film or the Si3N4 film covered on the inner wall or the jig of the unit is increased, the PSG film is operated as a stress buffer of the SiO2 film or the Si3N4 film so that the SiO2 film or the Si3N4 film covered on the inner wall or the jig scarcely cracks. Thus, the contamination of the Si wafer is alleviated.
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