| 摘要 |
PURPOSE:To minimize the difference in etching speed as well as the dispersion thereof by a method wherein an etchant is relatively moved in the two axial directions in parallel with the pattern forming surface of a semiconductor wafer and orthogonal to each other. CONSTITUTION:A carrier 2 containing a semiconductor wafer 1 is immersed in an etchant 3 in an etching vessel 8. The carrier 2 with etchant flowing pores made in the lateral direction in both upper and lower parts thereof is hung on a crank pin 11 of a crank shaft 8. The crank shaft 10 is installed to be crank-turned by a motor 4. In such a constitution, the semiconductor wafer 1 contained in the carrier 2 hung on the crank pin 11 is turned following after the crank-turning in the etchant 3. Through those procedures, the etchant 3 can be relatively moved as the composite motion in the two axial directions of wafer 1 in parallel with the pattern forming surface of wafer 1 and orthogonal to each other.
|
