| 摘要 |
PURPOSE:To make it possible to perform power amplification up to a 10 GHz band, by laminating a drain region, a gate region and a source region, providing a low-concentration or intrinsic semiconductor layer between the drain region and a gate region, and forming a channel region at a side surface crossing the laminated layers. CONSTITUTION:A first-conductivity type drain region (substrate) 1, a secondconductivity type gate region 3 and a first-conductivity type source region 5 are formed in a laminated pattern. A low-concentration or intrinsic semiconductor layer 2 is provided between the drain region 1 and the gate region 3. A channel region 7 is formed at a side surface crossing the laminated layers of the drain region 1, the low-concentration or intrinsic semiconductor layer 2, the gate region 3 and the source region 5. Because of the very short length of the gate and reductions in gate capacitance, gate resistance and source resistance, an ultimate structure, in which element characteristics are determined with the transition speed of electrons, is obtained. The distance between the gate and the drain is made long and a high output impedance state is formed so as to provide breakdown strength. Thus power amplification up to a band of several tens of GHz can be performed.
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