发明名称 APPARATUS FOR PRODUCING THIN FILM
摘要 PURPOSE:To produce a thin film of a compd. at a low temp. with high crystallinity by arranging plural targets for magnetron sputtering and an ion beam source so that vapor deposition can be carried out by sputtering under irradiation with beams of ions of a reactive gas. CONSTITUTION:Plural targets 11-14 for magnetron sputtering as evaporating sources and an ion beam source 15 generating means of ions of a reactive gas which combines with the target material are arranged. A substrate 16 is irradiated with beams of an ionized reactive gas from the source 15 or beams of electrically neutralized ions. The target material evaporated from the targets 11-14 combines with the reactive gas on the substrate 16 and a thin film of a compd. is formed.
申请公布号 JPS63114966(A) 申请公布日期 1988.05.19
申请号 JP19860261291 申请日期 1986.10.31
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 ADACHI HIDEAKI;MITSUYU TSUNEO;YAMAZAKI OSAMU
分类号 C23C14/36;C23C14/35 主分类号 C23C14/36
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