发明名称 |
CVD process for forming semiconducting film having hydrogenated germanium matrix |
摘要 |
An image-forming member for electrophotography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.
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申请公布号 |
US4745041(A) |
申请公布日期 |
1988.05.17 |
申请号 |
US19860932160 |
申请日期 |
1986.11.18 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
KOMATSU, TOSHIYUKI;HIRAI, YUTAKA;NAKAGAWA, KATSUMI;FUKUDA, TADAJI |
分类号 |
G03G5/082;(IPC1-7):G03G5/082 |
主分类号 |
G03G5/082 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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