| 摘要 |
PCT No. PCT/JP85/00038 Sec. 371 Date Nov. 12, 1985 Sec. 102(e) Date Nov. 12, 1985 PCT Filed Jan. 30, 1985 PCT Pub. No. WO85/03398 PCT Pub. Date Aug. 1, 1985.The present invention relates to CCD area sensors. The object of the invention is to remove the problem which stems from the fact that the charge transfer function of the vertical CCD(6) restricts the performance of the CCD area sensor. According to the CCD area sensor of the present invention, the fundamental feature resides in that the clocked transfer electrode 3(Z to U) of the vertical CCD(6) are driven by dissimilar clock voltages in order to independently transfer the signal charge packets of the whole potential wells of the vertical CCD(6), that the empty potential well is injected from the output terminal of the vertical CCD(6), and that the next empty potential well is injected from said output terminal before the empty potential well that was previously injected before reaches the opposite end of the output terminal of the vertical CCD(6).
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