| 摘要 |
PURPOSE:To prevent the generation of crack or cavity in an insulating film and assure excellent reliability such as moisture proof characteristic, even when the gap of aluminum wirings and diameter of contact holes is in the order of submicron, by forming an aluminum hydration oxide film as an insulating film to the surface of aluminum wiring by the chemical compound processing. CONSTITUTION:The sputter etching is carried out by Ar ion to the surface of aluminum wiring 5 to eliminate the aluminum film 9 and a damage layer is formed by ion bombardment to the surface of aluminum wiring 5 to reform the surface. Thereafter, when the chemical compound processing is carried out for about several to several tens of minutes under the pure water or vapor of 40 deg.C or higher, the aluminum hydration oxide film 11 can be formed with stable and quick growth rate to the surface of aluminum wiring 5. The aluminum hydration oxide film 11 is anisotropically formed, filling gap between aluminum wirings 5 of submicron level and the stepped portion of contact hole 4. Moreover, the stepped portion of the aluminum wiring 5 can also be flattened thereby. In addition, this aluminum hydration oxide film 11 can also be used as a first protection insulating film.
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