| 摘要 |
PURPOSE:To relieve an electric field concentration at a part of a semiconductor layer and prevent an element breakage due to the electrostatic discharge as well as the deterioration in electric characteristics by causing the semiconductor layer to be protruded from an end face of an upper electrode. CONSTITUTION:After etching an upper transparent electrode 5 by using, for example, a photoresist, its photoresist is peeled off once and it is formed again. An etching process is carried out so that an amorphous semiconductor layer 4 that is doped by impurities can be protruded from an etched edge face of the upper transparent electrode 5. Finally, an intrinsic amorphous semiconductor layer 3 is etched to obtained a photoelectric transfer element. Thus, even though an electric field is concentrated in the patterned end face of the upper electrode 5, the electric field is relieved by the amorphous semiconductor layer 4 where the impurities are doped and such a state of the electric field helps prevent an element breakage due to the field concentration and the deterioration of electric characteristics of the photoelectric conversion element.
|
