| 摘要 |
PURPOSE:To form a resist pattern with high contrast, resolution and accuracy by applying an aqueous solution which contains a diazo compd. and a water soluble polymer and has pH of <=2.0 on a resist, followed by exposing and developing the obtd. resist. CONSTITUTION:The titled material is formed by using the water soluble solution which contains the diazo compd. and the water soluble polymer and has pH of <=2.0. The layer 3 of a pattern forming material is applied on the resist 3 by means of a spin coating method, followed by exposing selectively the part of the resist 2A through a mark 6 with a UV ray 4 by means of reduction stepping method. The pattern 2B is formed by removing the contrast enhanced film 3 for pattern formation composed of the contrast enhanced layer with a conventional alkaline developer, and at the same time, by developing the undercoat resist 2A to form the resist pattern 2B. At this time, the layer 3 displays the contrast enhanced effect, thereby hindering the passage of a light 4. The resist pattern 2A which follows closely to the pattern of the mask 6, is formed with the light 4 which is incident to the resist 2A and follows closely to the mask pattern. |
