发明名称 GATE DRIVING CIRCUIT FOR FIELD EFFECT TRANSISTOR
摘要 PURPOSE:To reduce tune-on loss, by connecting a diode between the gate terminal and the source terminal of a FET, and connecting the gate terminal and the source terminal to a driving signal source via a resistor. CONSTITUTION:A diode 5 is connected between the gate terminal G and the source terminal S of the FET4 in a direction where forward directed voltage drop by a reverse voltage for the FET4 becomes less than the threshold voltage of the FET4, for example, in the direction where the cathode of the diode is directed toward the gate terminal G, and the anode toward the source terminal S if the FET is an N-channel FET. Also the gate terminal G and the source terminal S are connected to the signal driving source 1 via the resistor 3 and a pulse transformer 2.
申请公布号 JPS63108812(A) 申请公布日期 1988.05.13
申请号 JP19860254366 申请日期 1986.10.25
申请人 FUJI ELECTRIC CO LTD 发明人 SHIMIZU TOSHIHISA
分类号 H03K17/687;H03K17/691 主分类号 H03K17/687
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