The mobility of carriers in the channel region of a field effect transistor can be increased by providing a layered structure wherein electrons are separated from impurities. The channel is made up of external layers of wide bandgap material and internal layers with a narrower bandgap where the bottom of the conduction band of one layer is below the top of the valence band of the adjacent layer. A structure is shown with a layered channel having AlSb external layers and at least one or both of InAs and GaSb internal layers.
申请公布号
US4743951(A)
申请公布日期
1988.05.10
申请号
US19820355942
申请日期
1982.03.08
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
CHANG, CHIN-AN;CHANG, LEROY L.;ESAKI, LEO;MENDEZ, EMILIO E.